Broadband SiC Based UV Photodiode A = 36 mm2 - SG01XXL-8ISO90
? Broadband UVA+UVB+UVC, PTB reported high chip stability
? Active Area A = 36 mm2
? TO8 hermetically sealed metal housing, two isolated pins in a circle
? 10μW/cm2 peak radiation results a current of approx. 468 nA
? Dark Current: 120 fA
? Capacitance: 9000 pF
? Responsivity Range: 221 … 358 nm
- Model Number: SG01XXL-8ISO90
- Data Sheet:
- Quantity:
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Product Specification
SG01XXL-8ISO90
Broadband SiC based UV photodiode A = 36 mm2
◆ SG01XXL-8ISO90 UV Photodiode General features
Properties of the SG01XXL-8ISO90 UV photodiode
? Broadband UVA+UVB+UVC, PTB reported high chip stability
? Active Area A = 36 mm2
? TO8 hermetically sealed metal housing, two isolated pins in a circle
? 10μW/cm2 peak radiation results a current of approx. 468 nA
About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.
Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 . Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
◆ SG01XXL-8ISO90 UV Photodiode Specifications
Parameter
Symbol
Value
Unit
Spectral Characteristics
Typical Responsivity at Peak Wavelength
Smax
0.130
AW-1
Wavelength of max. Spectral Responsivity
λmax
280
nm
Responsivity Range (S=0.1*Smax)
–
221 … 358
nm
Visible Blindness (Smax/S>405nm)
VB
> 1010
–
General Characteristics (T=25°C)
Active Area
A
36
mm2
Dark Current (1V reverse bias)
Id
120
fA
Capacitance
C
9000
pF
Short Circuit (10μW/cm2 at peak)
Io
468
nA
Temperature Coefficient
Tc
< 0.1
%/K
Maximum Ratings
Operating Temperature
Topt
-55 … +170
°C
Storage Temperature
Tstor
-55 … +170
°C
Soldering Temperature (3s)
Tsold
260
°C
Reverse Voltage
VRmax
20
V
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